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IXFB52N90P - Polar Power MOSFET HiPerFET

Features

  • z z z G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 V V.

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Full PDF Text Transcription

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 52A 160mΩ 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 52 104 26 2 20 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb.
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