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IXDN55N120 - High Voltage IGBT with optional Diode

Features

  • q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package miniBLOC Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Advantages q q q Space savings Easy to mount with 2 screws High power density Symbol Conditio.

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Datasheet Details

Part number IXDN55N120
Manufacturer IXYS Corporation
File Size 72.78 KB
Description High Voltage IGBT with optional Diode
Datasheet download datasheet IXDN55N120 Datasheet
Additional preview pages of the IXDN55N120 datasheet.

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Full PDF Text Transcription

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High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.3 V C G G C miniBLOC, SOT-227 B E153432 G E E IXDN 55N120 E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 100 62 124 ICM = 100 VCEK < VCES 10 450 220 2500 -40 ... +150 -40 ...
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