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IS65WV12816EBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV12816EBLL, a member of the IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816EALL).
  • 2.2V-3.6V VDD (IS62/65WV12816EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free available BLOCK.

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Datasheet preview – IS65WV12816EBLL

Datasheet Details

Part number IS65WV12816EBLL
Manufacturer ISSI
File Size 1.05 MB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV12816EBLL Datasheet
Additional preview pages of the IS65WV12816EBLL datasheet.

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Full PDF Text Transcription

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IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Three state outputs  Industrial and Automotive temperature support  2CS Option Available  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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