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IS65WV12816FBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV12816FBLL, a member of the IS65WV12816FALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 26 mA (max) at 125°C.
  • CMOS Standby Current: 3.0 uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816FALL).
  • 2.2V-3.6V VDD (IS62/65WV12816FBLL).
  • Three state outputs.
  • Data Control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free avail.

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Datasheet preview – IS65WV12816FBLL

Datasheet Details

Part number IS65WV12816FBLL
Manufacturer ISSI
File Size 591.04 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV12816FBLL Datasheet
Additional preview pages of the IS65WV12816FBLL datasheet.

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Full PDF Text Transcription

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IS62/65WV12816FALL IS62/65WV12816FBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)  Three state outputs  Data Control for upper and lower bytes  Industrial and Automotive temperature support  2CS Option Available  Lead-free available DESCRIPTION The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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