IS65WV12816DALL Datasheet PDF - ISSI ULTRA LOW POWER CMOS STATIC RAM Specs

IS65WV12816DALL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV12816DALL, a member of the IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

bits.

CMOS technology.

Features

High-speed access time: 35ns, 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.8V ± 10% Vdd (IS62/65WV12816DALL).
2.5V--3.6V Vdd (IS62/65WV12816DBLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Autotmo.

Datasheet Details

Part number	IS65WV12816DALL
Manufacturer	ISSI
File Size	415.50 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS65WV12816DALL Datasheet
Additional preview pages of the IS65WV12816DALL datasheet.

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Full PDF Text Transcription

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IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

Published: Feb 18, 2024 |