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IS43TR81280ED - 1Gb DDR3 SDRAM

This page provides the datasheet information for the IS43TR81280ED, a member of the IS43TR16640ED 1Gb DDR3 SDRAM family.

Datasheet Summary

Description

RAS#.

CAS#.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • High speed data transfer rates with system frequency up to 800 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.
  • BL switch on the fly.
  • Auto Self Refresh(A.

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Datasheet preview – IS43TR81280ED

Datasheet Details

Part number IS43TR81280ED
Manufacturer ISSI
File Size 3.63 MB
Description 1Gb DDR3 SDRAM
Datasheet download datasheet IS43TR81280ED Datasheet
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Full PDF Text Transcription

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IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) ECC  Single bit error correction (per 64-bits)  Restrictions on Burst Length and Data Mask OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.
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