IS43TR81280B Datasheet PDF - ISSI 1Gb DDR3 SDRAM Specs

IS43TR81280B - 1Gb DDR3 SDRAM

This page provides the datasheet information for the IS43TR81280B, a member of the IS43TR16640B 1Gb DDR3 SDRAM family.

Datasheet Summary

Description

CS# ODT RAS#.

CAS#.

Clock: CK and CK# are differential clock inputs.

Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 1066 MHz.
8 internal banks for concurrent operation.
8n-bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Bu.

Datasheet Details

Part number	IS43TR81280B
Manufacturer	ISSI
File Size	3.11 MB
Description	1Gb DDR3 SDRAM
Datasheet	IS43TR81280B Datasheet
Additional preview pages of the IS43TR81280B datasheet.

📁 Similar Datasheet

IS431 - (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)

IS432 - (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)

IS435 - BUILT IN AMP TYPE LIGHT DETECTOR (Sharp Electrionic Components)

IS436 - BUILT IN AMP TYPE LIGHT DETECTOR (Sharp Electrionic Components)

IS437 - (IS437 / IS438) TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)

IS438 - (IS437 / IS438) TYPE OPIC LIGHT DETECTOR (Sharp Electrionic Components)

IS43R16160 - 256Mb Synchronous DRAM (Integrated Silicon Solution)

IS43R16160A - 16Meg x 16 256-MBIT DDR SDRAM (Integrated Silicon Solution)

IS43R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)

IS43R16320A - 32Meg x 16 512-MBIT DDR SDRAM (Integrated Silicon Solution)

Full PDF Text Transcription

Click to expand full text

IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.

Published: Aug 1, 2016 |