IS43R16160 Datasheet PDF - Integrated Silicon Solution 256Mb Synchronous DRAM Specs

IS43R16160 - 256Mb Synchronous DRAM

Datasheet Summary

Description

IS43R16160 is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface.

All control and address signals are referenced to the rising edge of CLK.

Features

Vdd =Vddq = 2.5V+0.2V (-5, -6, -75).
Double data rate architecture ; two data transfers per clock cycle.
Bidirectional , data strobe (DQS) is transmitted/ received with data.
Differential clock input (CLK and /CLK).
DLL aligns DQ and DQS transitions with CLK transitions edges of DQS.
Commands entered on each positive CLK edge;.
Data and data mask referenced to both edges of DQS.
4 bank operation controlled by BA0.

Datasheet Details

Part number	IS43R16160
Manufacturer	Integrated Silicon Solution
File Size	0.97 MB
Description	256Mb Synchronous DRAM
Datasheet	IS43R16160 Datasheet
Additional preview pages of the IS43R16160 datasheet.

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Full PDF Text Transcription

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IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK) • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS • Commands entered on each positive CLK edge; • Data and data mask referenced to both edges of DQS • 4 bank operation controlled by BA0 , BA1 (Bank Address) • /CAS latency -2.0 / 2.5 / 3.

Published: Jul 25, 2016 |