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IS42RM32400E - 128Mb Mobile Synchronous DRAM

This page provides the datasheet information for the IS42RM32400E, a member of the IS42SM81600E 128Mb Mobile Synchronous DRAM family.

Datasheet Summary

Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and precharge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Deep.

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Datasheet preview – IS42RM32400E

Datasheet Details

Part number IS42RM32400E
Manufacturer ISSI
File Size 402.44 KB
Description 128Mb Mobile Synchronous DRAM
Datasheet download datasheet IS42RM32400E Datasheet
Additional preview pages of the IS42RM32400E datasheet.

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Other Datasheets by ISSI

Full PDF Text Transcription

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IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full APRIL 2011 DESCRIPTION ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.
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