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IS42RM32160C - 512Mb Mobile Synchronous DRAM

This page provides the datasheet information for the IS42RM32160C, a member of the IS42SM32160C 512Mb Mobile Synchronous DRAM family.

Datasheet Summary

Description

ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM.

It achieves high-speed data transfer using a pipeline architecture with a synchronous interface.

All inputs and outputs signals are registered on the rising edge of the clock input, CLK.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • De.

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Datasheet preview – IS42RM32160C

Datasheet Details

Part number IS42RM32160C
Manufacturer ISSI
File Size 219.48 KB
Description 512Mb Mobile Synchronous DRAM
Datasheet download datasheet IS42RM32160C Datasheet
Additional preview pages of the IS42RM32160C datasheet.

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Full PDF Text Transcription

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IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM NOVEMBER 2010 FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS: • Configuration: 16Mx32 • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.
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