Datasheet Details
| Part number | IRGPF30F |
|---|---|
| Manufacturer | IRF |
| File Size | 256.66 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGPF30F Datasheet
|
|
|
General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Switching-loss rating includes all "tail" losses.
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) ≤ 3.7V @VGE = 15V, I C = 11A n-channel.