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STB11NM60N - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Current ID= 10A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STB11NM60N

Datasheet Details

Part number STB11NM60N
Manufacturer INCHANGE
File Size 263.11 KB
Description N-Channel MOSFET
Datasheet download datasheet STB11NM60N Datasheet
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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.38 UNIT ℃/W STB11NM60N isc website：www.iscsemi.
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