Datasheet4U Logo Datasheet4U.com

STB11NM60A-1 - N-Channel MOSFET

Datasheet Summary

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt.

📥 Download Datasheet

Datasheet preview – STB11NM60A-1

📁 Similar Datasheet

Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V RDS(on) <0.45Ω <0.45Ω <0.45Ω ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO-220 3 1 2 I2PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Published: |