Collector-Emitter Breakdown Voltage
: V(BR)CEO= -80V(Min)
High DC Current Gain
: hFE= 60(Min)@ (VCE= -1V, IC= -2A)
Low Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A)
Complement to Type KSE44H11
Minimum Lot-to-Lot variations for robust device
performance and
Full PDF Text Transcription for KSE45H11 (Reference)
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isc Silicon PNP Power Transistor KSE45H11 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A)...
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O= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A) ·Complement to Type KSE44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 50 W 150 ℃ Tstg Storage Temperature R
KSE45H11 Datasheet
