High Collector Current-IC= -5A
Low Saturation Voltage -
: VCE(sat)= -0.3V(Max)@ IC= -0.5A, IB= -50mA
Good Linearity of hFE
Complement to Type KSE200
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Suited for watts audio a
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -5A ·Low Saturation Voltage - : VCE(sat)= -0.3V(Max)@ IC= -0.5A, IB= -50mA ·Good Linearity of hFE...
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- : VCE(sat)= -0.3V(Max)@ IC= -0.5A, IB= -50mA ·Good Linearity of hFE ·Complement to Type KSE200 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for watts audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ KSE210 isc website：www.iscsemi.
KSE210 Datasheet
