High Collector-Emitter breakdown voltage
Low Collector Saturation Voltage
Complement to Type KSE340
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High voltage general purpose applications
Suit
Full PDF Text Transcription for KSE350 (Reference)
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isc Silicon PNP Power Transistor KSE350 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE340 ·100% avalanche...
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ollector Saturation Voltage ·Complement to Type KSE340 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
KSE350 Datasheet
