High Collector-Emitter breakdown voltage
Low Collector Saturation Voltage
Complement to Type KSE350
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High voltage general purpose applications
Suitable for transform
ABSOLUT
Full PDF Text Transcription for KSE340 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSE340. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor KSE340 DESCRIPTION ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE350 ·Minimum Lot-to...
View more extracted text
ollector Saturation Voltage ·Complement to Type KSE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage general purpose applications ·Suitable for transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 1.3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
KSE340 Datasheet
