Datasheet Details
| Part number | KSB834W |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.27 KB |
| Description | PNP Transistor |
| Download | KSB834W Download (PDF) |
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| Part number | KSB834W |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.27 KB |
| Description | PNP Transistor |
| Download | KSB834W Download (PDF) |
|
|
|
·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -3 A 1.5 W 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB834W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSB834W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current CONDITIONS IC= -3.0A;
IB= -300mA IC= -0.5A;
VCE=-5V VCB= -60V;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSB834W | Low Frequency Power Amplifier | Fairchild Semiconductor |
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KSB834 | PNP Silicon Transistor | Samsung semiconductor |
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KSB834 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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KSB834 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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