Datasheet Details
| Part number | KSB1151 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.16 KB |
| Description | PNP Transistor |
| Download | KSB1151 Download (PDF) |
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| Part number | KSB1151 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.16 KB |
| Description | PNP Transistor |
| Download | KSB1151 Download (PDF) |
|
|
|
·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 1.3 150 ℃ -55~150 ℃ KSB1151 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSB1151 | PNP Transistor | JCET |
 |
KSB1151 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
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