Datasheet Details
| Part number | KSB601 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.40 KB |
| Description | PNP Transistor |
| Download | KSB601 Download (PDF) |
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| Part number | KSB601 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.40 KB |
| Description | PNP Transistor |
| Download | KSB601 Download (PDF) |
|
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|
·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switching applications.
·Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-DC Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -0.5 A 30 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor KSB601 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -3mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
isc Silicon PNP Darlington Power Transistor KSB601.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSB601 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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