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IPA60R520E6 - N-Channel MOSFET

Features

  • With TO-220F package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Reduced switching and conduction losses.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R520E6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8.1 A IDM Drain Current-Single Plused 22 A PD Total Dissipation @TC=25℃ 29 W Tj Max.
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