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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R099P6
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
37.9 24
A
IDM
Drain Current-Single Pulsed
109
A
PD
Total Dissipation @TC=25℃
34
W
Tj
Max.
IPA60R099P6 Datasheet
