BUL6825 - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

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Datasheet Details

Part number	BUL6825
Manufacturer	Inchange Semiconductor
File Size	211.52 KB
Description	NPN Transistor
Datasheet	BUL6825 Datasheet
Additional preview pages of the BUL6825 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in relay drivers ,inverters ,switching regulators and deflection circuits applications.

Published: Sep 8, 2020 |