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BUL128 - NPN Transistor

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Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us

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Datasheet Details

Part number BUL128
Manufacturer INCHANGE
File Size 208.26 KB
Description NPN Transistor
Datasheet download datasheet BUL128 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL128 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
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