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BUL382D - NPN Transistor

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Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number BUL382D
Manufacturer INCHANGE
File Size 209.23 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
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