Full PDF Text Transcription for BUK9518-55A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK9518-55A. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully characterized avalanche voltage and current ·100% avalanche...
View more extracted text
6mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Automotive and general purpose power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 61 IDM Drain Current-Single Pulsed 246 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.1 UNI
BUK9518-55A Datasheet
