Full PDF Text Transcription for BUK437-500B (Reference)
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BUK437-500B. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-...
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mmutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor BUK437-500B ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 10 6.
BUK437-500B Datasheet
