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BUK436-200A - N-Channel MOSFET

General Description

Drain Source Voltage- : VDSS=200V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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Full PDF Text Transcription for BUK436-200A (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-t...

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ge- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK436-200A ID Current-continuou s@ TC=25℃ BUK436-200B Ptot Total Dissipation@TC=25℃ ±30 V 19 A 17 125 W Tj Max.

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