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BDY56 - NPN Transistor

Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and

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Datasheet Details

Part number BDY56
Manufacturer Inchange Semiconductor
File Size 203.47 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor BDY56 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
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