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BDY54 - SILICON NPN TRANSISTOR

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Datasheet Details

Part number BDY54
Manufacturer TT
File Size 195.16 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet BDY54 Datasheet
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Full PDF Text Transcription

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SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage 120V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 12A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 60W Derate Above 25°C 0.35W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 2.9 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
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