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BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS

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Datasheet Details

Part number BDY55
Manufacturer Comset Semiconductors
File Size 129.02 KB
Description (BDY55 / BDY56) NPN SILICON TRANSISTORS
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BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature www.DataSheet.net/ Value BDY55 BDY56 BDY55 BDY56 60 120 100 150 7 15 7 117 200 -65 to +200 Unit V V V A A W °C @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.
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