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BDY49 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Excellent Safe Operating Area High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed

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Datasheet Details

Part number BDY49
Manufacturer Inchange Semiconductor
File Size 199.58 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
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