BDY46 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) DC Current Gain- : hFE=20(Min.)@IC = 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	BDY46
Manufacturer	Inchange Semiconductor
File Size	207.75 KB
Description	Silicon NPN Power Transistor
Datasheet	BDY46 Datasheet
Additional preview pages of the BDY46 datasheet.

📁 Similar Datasheet

BDY46 - Bipolar NPN Device (Seme LAB)
BDY47 - Bipolar NPN Device (Seme LAB)
BDY10 - Silicon NPN Transistor (Valvo)
BDY11 - Silicon NPN Transistor (Valvo)
BDY12 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
BDY13 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
BDY13-6 - Silicon NPN Power Transistor (Inchange Semiconductor)
BDY20 - Bipolar NPN Device (Seme LAB)
BDY20 - Silicon NPN Power Transistor (Inchange Semiconductor)
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)

Other Datasheets by INCHANGE

BDY42 - NPN Transistor
BDY43 - NPN Transistor
BDY44 - NPN Transistor
BDY45 - NPN Transistor
BDY47 - NPN Transistor
BDY48 - NPN Transistor
BDY49 - NPN Transistor
BDY25 - NPN Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor BDY46 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

Published: Apr 22, 2014 |