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BDX87C - NPN Transistor

Description

High DC Current Gain- : hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type BDX88C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switchi

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX87C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type BDX88C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
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