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BDX83 - NPN Transistor

Description

High DC Current Gain- : hFE= 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching

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isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX83 45 BDX83A 60 VCBO Collector-Base Voltage BDX83B 80 BDX83C 100 BDX83 45 VCEO Collector-Emitter Voltage BDX83A 60 BDX83B 80 BDX83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 250 PC Collector Power Dissipation @ TC=25
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