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BDX85 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain- : hFE= 750(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C Complement to Type BDX86/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
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