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BDX87 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain- : hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
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