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BDX86 - PNP Transistor

Description

High DC Current Gain- : hFE= 750(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C Complement to Type BDX85/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable ope

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isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C ·Complement to Type BDX85/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
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