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BDT31F - Silicon NPN Power Transistors

Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performa

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isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
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