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BDT31A - NPN Transistor

Download the BDT31A datasheet PDF. This datasheet also covers the BDT31 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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Note: The manufacturer provides a single datasheet file (BDT31-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
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