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BDT31 - NPN Transistor

Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
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