BD539D - NPN Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type BD540D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and swit

Inchange Semiconductor

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Datasheet Details

Part number	BD539D
Manufacturer	Inchange Semiconductor
File Size	187.05 KB
Description	NPN Transistor
Datasheet	BD539D Datasheet
Additional preview pages of the BD539D datasheet.

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isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

Published: Sep 30, 2020 |