BD539B - NPN Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Complement to Type BD540B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switc

Inchange Semiconductor

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Datasheet Details

Part number	BD539B
Manufacturer	Inchange Semiconductor
File Size	186.68 KB
Description	NPN Transistor
Datasheet	BD539B Datasheet
Additional preview pages of the BD539B datasheet.

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isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD540B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

Published: Sep 30, 2020 |