BD539A - NPN Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Complement to Type BD540A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switc

Inchange Semiconductor

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Datasheet Details

Part number	BD539A
Manufacturer	Inchange Semiconductor
File Size	186.65 KB
Description	NPN Transistor
Datasheet	BD539A Datasheet
Additional preview pages of the BD539A datasheet.

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isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Complement to Type BD540A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

Published: Sep 30, 2020 |