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BD538 - PNP Transistor

Description

DC Current Gain - : hFE = 40@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) Complement to Type BD537 APPLICATIONS

applications.

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Datasheet Details

Part number BD538
Manufacturer Inchange Semiconductor
File Size 189.19 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD537 APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCES Collector-Emitter Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
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