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2SB993 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Collector Power Dissipation- : PC= 40W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable op

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -4A ·Complement to Type 2SD1363 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.
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