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2SB995 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ IC= -4A Complement to Type 2SD1355 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applicatio

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
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