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2SB994 - SILICON PNP TRANSISTOR

Features

  • . Low Collector Saturation Voltage : VcE(sat)=-1.0V(Max. ) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . Complementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2.

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Datasheet Details

Part number 2SB994
Manufacturer Toshiba
File Size 89.21 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB994 Datasheet

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2SB994 SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Low Collector Saturation Voltage : VcE(sat)=-1.0V(Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C=30W (Tc=25°C) . Complementary to 2SD1354 Unit in mm : jl3ma^. 0&2±Q2 MAXIMUM RATINGS (Ta=25°C^> CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO v EBO ic Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C IB Storage Temper ature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO v (BR)CE0 RATING -60 -60 -7 UNIT -3 -0.5 1.5 30 150 -55-150 JEDEC 1.
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