Datasheet4U Logo Datasheet4U.com

2SA877 - PNP Transistor

General Description

High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

Full PDF Text Transcription for 2SA877 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA877. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon PNP Power Transistor 2SA877 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum...

View more extracted text
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
SavantIC Logo 2SA877 (2SA877 / 2SA878) Silicon POwer Transistors SavantIC

More Datasheets from Inchange Semiconductor

Part Number Description
2SA808 PNP Transistor
2SA1002 Silicon PNP Power Transistor
2SA1006A PNP Transistor
2SA1006B PNP Transistor
2SA1009A PNP Transistor
2SA1010 PNP Transistor
2SA1012 TO-252 PNP Transistor
2SA1012-D PNP Transistor
2SA1013 PNP Transistor
2SA1046 PNP Transistor