High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -100V(Min)
High Current Capability
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power switching applications
High frequency power amplifie
Full PDF Text Transcription for 2SA1046 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA1046. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Darlington Power Transistor 2SA1046 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Saf...
View more extracted text
ltage- V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 100 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.isc
2SA1046 Datasheet
